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Ordering number : ENA0920
CPH3249
SANYO Semiconductors
DATA SHEET
CPH3249
Features
* * * *
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW300s, duty cycle10% Mounted on a ceramic board (600mm20.8mm) Conditions Ratings 700 350 8 1 2 0.5 0.9 150 --55 to +150 Unit V V V A A A W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 hFE3 fT Cob Conditions VCB=350V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=5V, IC=1mA VCE=10V, IC=0.1A VCB=10V, f=1MHz 100 10 60 20 8 MHz pF Ratings min typ max 10 10 200 Unit A A
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907CB TI IM TC-00000870 No. A0920-1/4
CPH3249
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=0.5A, IB=0.1A IC=0.5A, IB=0.1A IC=1mA, IE=0A IC=5mA, RBE= IE=1mA, IC=0A IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V 700 350 8 1.0 2.5 0.3 Ratings min typ max 0.8 1.5 Unit V V V V V s s s
Note : Since the above stated product is a high-voltage device, so please pay attention to its reliability when in use.
Package Dimensions
unit : mm (typ) 7015A-005
2.9 0.15
Switching Time Test Circuit
0.6
PW=20s D.C.1% INPUT VR
IB1 OUTPUT IB2 RB
3
0.2
RL 100 + 470F VCC=200V
2.8
1.6
0.05
50 + 100F
0.6
1
0.95
2
0.4
1 : BaseEmitter 2 : Emitter 3 : Collector SANYO : CPH3
VBE= --5V
0.9
0.2
mA
1.0 0.9
IC -- VCE
200
150mA
1.0 0.9
IC -- VBE
VCE=5V
Collector Current, IC -- A
Collector Current, IC -- A
0.8 0.7 0.6 0.5 0.4 0.3
100mA
90mA 80mA 70mA
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
10mA
60mA 50mA 40mA
0.2 0.1 0 0 1 2 3 4 5 6
IB=0mA
7 8 IT12843
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT12844
Collector-to-Emitter Voltage, VCE -- V
1000 7 5 3 2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
3 2
hFE -- IC
VCE=5V
Ta=120C 25C
Ta= 1
20 C 25C --40C
VC =5 E
30mA 20mA
100
DC Current Gain, hFE
DC Current Gain, hFE
100 7 5 3 2 10 7 5 3 2 1.0 0.001 2 3 5 7 0.01
--40C
7 5 3 2
1V
V
2V
0.7 V
10 7 5 3 0.001
2
3
5 7 0.1
2
3
Collector Current, IC -- A
5 7 1.0 IT12845
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Collector Current, IC -- A
5 7 1.0 IT12846
No. A0920-2/4
CPH3249
10 7 5
VCE(sat) -- IC
IC / IB=5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
10 7 5 3 2
VCE(sat) -- IC
25C
5 7 0.01 2 3 5 7 0.1 2
IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 IT12847
25
Ta=
C
--4
1.0 7 5 3 2
C 120
0C
0.1 7 0.001 2 3 3
Ta=12 0C
Collector Current, IC -- A
10 7
VBE(sat) -- IC
Collector Current, IC -- A
1.0
5 7 1.0 IT12848
SW Time -- IC
IC / IB=5 Switching Time, SW Time -- s
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5 3 2
7
IC / IB1=10 IB2 / IB1=10 R load
tstg
5
25C
1.0 7 5 3 2
Ta= --40C
120C
3
tf
2
0.1 0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 3 2
Forward Bias A S O
ICP=2A IC=1A
30
1m
Collector Current, IC -- A
5 7 1.0 IT12849
0.1 0.1
2
3
5
7
5 3 2
Reverse Bias A S O
Collector Current, IC -- A
1.0 IT12850
Collector Current, IC -- A
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
DC
1.0 7 5 3 2 0.1 7 5 3 2
op
er
ati
on
0.001 0.1
Ta=25C Single pulse Mounted on a ceramic board (600mm20.8mm)
23 5 7 1.0 23 5 7 10 23 5 7 100 23 57
0.01 100
Tc=25C IB2= --0.2A L=500H Single pulse
2 3 5 7
Collector-to-Emitter Voltage, VCE -- V
1000 900
IT12851
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
1000 IT12852
Collector Dissipation, PC -- mW
M
800
ou
nt
ed
on
600
ac
er
am
ic
bo
ar
d
400
(6
00
m
m2
0.
200
8m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT12853
No. A0920-3/4
--40 C
3
PT
=1
00
s
s 0
s
10 m s
CPH3249
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice.
PS No. A0920-4/4

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